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UPC2726T датащи(PDF) 1 Page - NEC |
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UPC2726T датащи(HTML) 1 Page - NEC |
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1 / 12 page ![]() Caution: Electro-static sensitive device BIPOLAR NALOG NTEGRATED IRCUIT µµµµPC2726T 1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 1994 © Document No. P10873EJ2V0DS00 (2nd edition) (Previous No. IC-3125) Date Published March 1997 N Printed in Japan DATA SHEET DESCRIPTION The µPC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier. This IC operates up to 1.6 GHz and therefore is suitable for BS tuner, mobile communication and measurement equipment applications. This IC can also use as differential oscillator application. The µPC27×× series is manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold metallization wirings. These materials can protect the chips from external pollution and prevent corrosion and migration. Thus, this process can produce the ICs with excellent performance, uniformity and reliability. FEATURES • Wide frequency respone − fU= 1.6 GHz @ −3 dB GP, VCC = 5 V • Power gain − GP = 15 dB @ 5 V • Low power consumption: 5 V, 15 mA TYP./2 V, 2.5 mA • 6 pin mini mold for high-density surface mounting. ORDERING INFORMATION PART NUMBER PACKAGE SUPPLYING FORM µPC2726T-E3 6 pin mini mold Embossed tape 8 mm wide. 3 kp/reel. Pin 1, 2, 3 face to perforation side of the tape. * For evaluation sample order, please contact your local NEC sales office. (Part number: µPC2726T) EQUIVALENT CIRCUIT PIN CONNECTIONS RF OUT VCC RF IN <5> <3> <1> RF OUT RF IN <4> <6> GND <2> 3 2 1 4 5 6 (Top View) 4 5 6 (Bottom View) 1. INPUT 2. GND 3. OUTPUT 4. OUTPUT 5. VCC 6. INPUT 3 2 1 |
Аналогичный номер детали - UPC2726T |
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Аналогичное описание - UPC2726T |
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