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HIP5010 датащи(PDF) 3 Page - Intersil Corporation

номер детали HIP5010
подробное описание детали  7V, 17A SynchroFET??Complementary Drive Synchronous Half-Bridge
PDF  6 Pages
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производитель  INTERSIL [Intersil Corporation]
домашняя страница  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HIP5010 датащи(HTML) 3 Page - Intersil Corporation

  HIP5010 Datasheet HTML 1Page - Intersil Corporation HIP5010 Datasheet HTML 2Page - Intersil Corporation HIP5010 Datasheet HTML 3Page - Intersil Corporation HIP5010 Datasheet HTML 4Page - Intersil Corporation HIP5010 Datasheet HTML 5Page - Intersil Corporation HIP5010 Datasheet HTML 6Page - Intersil Corporation  
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2-5
Absolute Maximum Ratings
Thermal Information (Typical)
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16V
Input Voltage VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7V
IPHASE, IVIN, IGND (TJ = 25
oC) . . . . . . . . . . . 17A (Repetitive Peak)
IPHASE, IVIN, IGND (TJ = 150
oC) . . . . . . . . . . 15A (Repetitive Peak)
PWM Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -4V to +16V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 3 (4kV)
Lead Temperature (Soldering 10s) (Lead Tips Only). . . . . . . 300oC
Storage Temperature Range . . . . . . . . . . . . . . . . . . -65oC to 150oC
Junction Temperature Range . . . . . . . . . . . . . . . . . . -40oC to 150oC
Operating Conditions
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V, 20%
Input Voltage VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 5.5V
Supply Voltage, VCC, minimum for charge-pumped start-up . +4.0V
Package
θJC††
θJA (oC/W)†
(oC/W)
0123
3†††
SOIC (IB) . . .
26
63
45
42
41
35
SIP (IS). . . . .
2
55
30
25
24
18
SIP (IS1). . . .
2
-
-
---
†
Versus additional square inches of 1 ounce copper on the
printed circuit board.
††
θJC is measured to pin 12 for the SOIC. Printed circuit board
had 1 square inch of copper. For SIP Packages value shown is
typical with an infinite heat sink.
††† 200 linear feet per minute of air flow.
IPHASE.SIPs:11.5A(RMS), 11.2A(DC); SOIC:7.4A(RMS), 7.4A(DC)
IVIN . . . SIPs:10.0A(RMS), 8.5A(DC); SOIC:6.4A(RMS), 6.4A(DC)
IGND. . . . .SIPs:8.5A(RMS), 6.0A(DC); SOIC:5.4A(RMS), 5.4A(DC)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
Electrical Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
TJ = 25
oC
TJ = - 40
oC
TJ = 150
oC
UNITS
MIN
TYP
MAX
MIN
MAX
rDS(ON) Upper MOSFET
RDSU
VCC = 12V, VIN = 5V
-34
39-65
m
Ω
rDS(ON) Lower MOSFET
RDSL
VCC = 12V, VIN = 5V
-36
42-68
m
Ω
VIN Operating Current
IVINO
VIN = 5V, No Load, 500kHz
-
5
8
-
10
mA
VIN Quiescent Current
IVIN
PWM or PWM = VCC or GND
-
0.1
10
-
100
µA
VCC Operating Current
ICCO
VCC = 12V, 500kHz
-
8
12
-
15
mA
VCC Quiescent Current (HIP5010)
ICCIH
PWM = VCC
-80-
-
400
µA
VCC Quiescent Current (HIP5010)
ICCIL
PWM = GND
-
0.1
10
-
100
µA
VCC Quiescent Current (HIP5011)
ICCNIH
PWM = VCC
-
0.1
10
-
100
µA
VCC Quiescent Current (HIP5011)
ICCNIL
PWM = GND
-
140
-
-
400
µA
Low Level PWM Input Voltage
VIL
-
1.8
-
1
-
V
High Level PWM Input Voltage
VIH
-
2.1
-
-
3
V
PWM Input Voltage Hysteresis
VIHYS
-
0.3
-
-
-
V
Input Pulldown Resistance (HIP5010)
RPWM
-
220
-
100
400
k
Ω
Input Pullup Resistance (HIP5011)
RPWM
-
220
-
100
400
k
Ω
Switching Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
TJ = 25
oC
TJ = - 40
oC
TJ = 150
oC
UNITS
MIN
TYP
MAX
MIN
MAX
Upper Device Turn-Off Delay
tPHL
VCC = 12V, IPHASE = -1A
-
30
50
-
80
ns
Lower Device Turn-Off Delay
tPLH
VCC = 12V, IPHASE = +1A
-
30
50
-
80
ns
Dead Time
tDT
VCC = +12V, IPHASE = -1A
-
10
-
-
-
ns
Phase Rise-Time
tr
VCC = 12V, IPHASE = -1A
-
20
-
-
-
ns
Phase Fall-Time
tf
VCC = 12V, IPHASE = +1A
-
20
-
-
-
ns
HIP5010, HIP5011



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