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Die Characteristics

DIE DIMENSIONS:

(2261

µm x 2235µm x 533µm ±51µm)

89 x 88 x 21mils

±2mil

METALLIZATION:

Type: Al Si

Thickness: 11k

Å

SUBSTRATE POTENTIAL:

Unbiased (Silicon on Sapphire)

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Thickness: 13k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

192

PROCESS:

CMOS SOS

Metallization Mask Layout

HCS74T

R1

CP1 (3)

S1 (4)

Q1 (5)

Q1 (6)

(8)

(9)

(10) S2

(11) CP2

(12) D2

(13) R2

(1)

(14)

Q2

Q2

D1

(2)

NC

NC

(7)

GND

HCS74T