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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SA1875-F датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1875-F датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 3 page  SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SA1875 ■ Features ● High fT : fT=400MHz(typ). ● High breakdown voltage ● Large current capacitance. 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -200 Collector - Emitter Voltage VCEO -200 Emitter - Base Voltage VEBO -3 Collector Current - Continuous IC -300 Colletor Current - Pulse ICP -600 Base Current IB -30 Collector Power Dissipation 0.8 Tc=25℃ 12 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 PC W V ℃ mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -200 Collector- emitter breakdown voltage VCEO Ic= -1 mA，RBE=∞ -200 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -3 Collector-base cut-off current ICBO VCB= -150 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -2V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -1 Base - emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -1 VCE= -10V, IC= -50mA 60 320 VCE= -10V, IC= -250mA 20 Collector output capacitance Cob VCB= -30V, IE= 0,f=1MHz 5 Reverse Transfer Capacitance Cce VCB= -30V, IE= 0,f=1MHz 4.2 Transition frequency fT VCE= -10V, IC= -100mA 400 MHz DC current gain hFE pF V V uA ■ Classification of hfe(1) Type 2SA1875-D 2SA1875-E 2SA1875-F Range 60-120 100-200 160-320 ● Complements to 2SC4976 |
Аналогичный номер детали - 2SA1875-F |
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Аналогичное описание - 2SA1875-F |
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ссылки URL |
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