Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

As complementary type the PNP transistor MMBT3904 is recommended

Epitaxial planar die construction

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-40

V

Collector-Emitter Voltage

V

CEO

-40

V

Emitter-Base Voltage

V

EBO

6

V

Collector Current -Continuous

I

C

-200

mA

Collector Power Dissipation

P

C

200

mW

Thermal Resistance Junction to Ambient

R

θJA

625

/W

Junction Temperature

Tj

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

-40

v

Collector-emitter breakdown voltage

-40

v

Emitter-base breakdown voltage

-5

v

Collector cut-off current

-0.1

uA

Collector cut-off current

50

uA

Emitter cut-off current

-0.1

uA

DC current gain

100

300

DC current gain

30

Collector-emitter saturation voltage

-0.4

v

Base-emitter saturation voltage

-0.95

v

Transition frequency

fT

300

Delay Time

td

35

nS

Rise Time

tr

35

nS

Storage Time

ts

225

nS

Fall Time

tf

75

nS

CLASSIFICATION OF

Rank

O

Y

Range

120-200

200-300

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

(PNP)

MMBT3906

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/