Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

Epitaxial planar die construction.

Ideal for medium power amplification and switching.

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-60

V

Collector-Emitter Voltage

V

CEO

-40

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-600

mA

Collector Power Dissipation

350

mW

Thermal Resistance Junction to Ambient

360

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base

breakdown

voltage

VCBO

IC=-10μA IE=0

-60

V

Collector-emitter

breakdown

voltage

VCEO

IC=-10mA IB=0

-40

V

Emitter-base

breakdown

voltage

VEBO

IE=-10μA IC=0

-5

μV

Collector cut-off current

ICBO

VCB=-50V IE=0

-0.02

μA

Collector cut-off current

ICEX

VCE=-30V VBE(OFF)=-0.5V

-0.05

μA

DC current gain

hFE

VCE=-10V IC=-150mA

VCE=-10V IC=-0.1Ma

VCE=-10V IC=-1mA

VCE=-10V IC=-10mA

VCE=-10V IC=-500mA

100

35

50

75

30

300

Collector-emitter

saturation

voltage

VCE(sat)

IC=-150mA IB=-15mA

IC=-500mA IB=-50mA

-0.4

-1.6

V

Base-emitter

saturation

voltage

VBE(sat)

IC=-150mA IB=-15mA

IC=-500mA IB=-50mA

-1.3

-2.6

V

Output capacitance

Cob

VCB=10V,f=1.0MHz

8.0

pF

Input capacitance

Cib

VEB=10V,f=1.0MHz

30

pF

Transition

frequency

fT

VCE=-20V IC=-50mA

f=100MHz

200

MHz

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MMBT2907

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/