Page:P1-P1

Plastic-Encapsulate Transistors

FEATURES

Epitaxial planar die construction.

Ultra-small surface mount package.

Marking:M1J

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

40

V

Collector-Emitter Voltage

V

CEO

15

V

Emitter-Base Voltage

V

EBO

4.5

V

Collector Current -Continuous

I

C

200

mA

Collector Power Dissipation

300

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

VCBO

IC=10μA IE=0

40

V

Collector-emitter breakdown voltage

VCEO

IC=10mA IB=0

15

V

Emitter-base breakdown voltage

VEBO

IE=10μA IC=0

4.5

V

Collector cut-off current

ICBO

VCB=20V IE=0

0.4

uA

DC current gain

hFE

VCE=1.0V IC=10mA

40

120

VCE=2.0V IC=100mA

20

Collector-emitter saturation voltage

VCE(sat)

IC=10mA IB=1.0mA

0.25

V

Output capacitance

Cobo

VCE=5.0V,IE=0,f=1.0MH

z

4.0

pF

Small signal current gain

hfe

IC=10mA,VCE=1

0V, f=100MHz

5.0

Storage Time

ts

IB1=IB2=IC=10mA

13

ns

Turn-on time

ton

VCC=3V, IC=10mA,

IB1=3mA

12

ns

Turn-off time

toff

VCC=3V, IC=10mA,

IB1=3mA IB2=1.5mA

18

ns

(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MMBT2369

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/