37

Specifications HCS05MS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS

NOTES

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Capacitance Power

Dissipation

CPD

VCC = 5.0V, VIH = 5.0V,

VIL = 0.0V, f = 1MHz

1

-

15

pF

1

-

23

pF

Input Capacitance

CIN

VCC = 5.0V, VIH = 5.0V,

VIL = 0.0V, f = 1MHz

1

-

10

pF

1

-

10

pF

Output Transition

Time

TTHL

VCC = 4.5V, VIH = 4.5V,

VIL = 0.0V

1

1

15

ns

1

1

22

ns

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly

tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

(NOTE 1)

CONDITIONS

TEMPERATURE

200K RAD

LIMITS

UNITS

MIN

MAX

Supply Current

ICC

VCC = 5.5V, VIN = VCC or GND

-

0.2

mA

Output Current (Sink)

IOL

VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0V

4.0

-

mA

Output Voltage Low

VOL

VCC = 5.5V , VIH = 3.85V, VIL = 1.65V,

IOL = 50

µA

-

0.1

V

VCC = 4.5V , VIH = 3.15V, VIL = 1.35V,

IOL = 50

µA

-

0.1

V

Input Leakage Current

IIN

VCC = 5.5V, VIN = VCC or GND

±5

µA

Three-State Output

Leakage Current

IOZH

VCC = 5.5V, Force Voltage = 0V or VCC

±50

µA

Noise Immunity

Functional Test

FN

VCC = 4.5V, VIH =3.15V, VIL = 1.35V,

(Note 2)

-

V

Propagation Delay

TPLZ

TPZL

VCC = 4.5V, VIH =4.5V, VIL = 0V

2

20

ns

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO

≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

PARAMETER

SYMBOL

GROUP B SUBGROUP

UNITS

Supply Current

ICC

+3

µA

Three-State Leaking Current

IOZH

±200

nA

Output Current

IOL

-15

%

Spec Number

518829