BCP69 datasheet(2/2 Pages) KEXIN

номер детали	BCP69

подробное описание детали	PNP Transistors

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производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

PNP Transistors

BCP69 (KCP69)

■

Electrical Characteristics Ta = 25℃

■

Typical Characterisitics

Fig.1 DC current gain; typical values.

VCE = −1 V.

200

400

hFE

100

300

−

10−1

−

IC (mA)

−

102

−

104

−

103

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-32

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-20

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

VCB= -25 V , IE=0

-100

VCB= -25 V , IE=0,TJ=150℃

-10

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-100

Collector-emitter saturation voltage

VCE(sat) IC=-1 A, IB=-100mA

-0.5

Base - emitter saturation voltage

VBE(sat) IC=-1 A, IB=-100mA

-1.2

VCE= -10V, IC=- 5mA

-0.62

VCE= -1V, IC= -1 A

-1

VCE= -10V, IC= -5mA

VCE= -1V, IC= -500mA

375

VCE= -1V, IC=- 1 A

Collector capacitance

Cob

VCB= -5V, IE= Ie=0,f=1MHz

Transition frequency

VCE= -5V, IC= -10mA,f=100MHz

MHz

DC current gain

hFE

Collector-base cut-off current

ICBO

Base - emitter voltage

VBE

■

Classification of hfe(2)

Type

BCP69

BCP69-16

BCP69-25

Range

83-375

100-250

160-375

Marking

BCP69

BCP69-16

BCP69-25

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