Document No. P12443EJ5V0DS00 (5th edition)

Date Published November 1999 N CP(K)

Printed in Japan

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT

WIDE BAND AMPLIFIER

DATA SHEET

©

1983, 1999

The mark

shows major revised points.

DESCRIPTION

PIN CONNECTIONS

The

µPC1652G is a silicon monolithic integrated circuit

especially designed as a wide band amplifier convering HF band

through UHF band.

FEATURES

• Excellent frequency response : 1 200 MHz TYP. @ 3 dB down

• High power gain : 18 dB TYP. @ f = 500 MHz

• SOP package

°°°°C)

Supply Voltage

7V

Total Power dissipation

440

mW

Operating Ambient Temperature

−20 to +75

°C

Storage Temperature

−40 to +125

°C

EQUIVALENT CIRCUIT

CHARACTERISTIC

SYMBOL MIN. TYP. MAX. UNIT

TEST CONDITIONS

Circuit Current

15

20

25

mA

No signals

Power Gain

16

18

20

dB

f = 500 MHz

Noise Figure

NF

5.5

6.5

dB

f = 500 MHz

Band Width

BW

1000 1200

MHz 3 dB down below flat gain

Isolation

23

26

dB

f = 500 MHz

Input Return Loss

17

20

dB

f = 500 MHz

Output Return Loss

12

15

dB

f = 500 MHz

Maximum Output Level

3

5

dBm f = 500 MHz

NEC cannot assume any responsibility for any circuits shown or represent that

they are free from patent infringement

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

1

INPUT

2

GND

3

GND

4

GND

8

GND

5

OUTPUT

OUT

GND

IN