поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

FSYC160R датащи(PDF) 2 Page - Intersil Corporation

номер детали FSYC160R
подробное описание детали  Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  INTERSIL [Intersil Corporation]
домашняя страница  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSYC160R датащи(HTML) 2 Page - Intersil Corporation

  FSYC160R Datasheet HTML 1Page - Intersil Corporation FSYC160R Datasheet HTML 2Page - Intersil Corporation FSYC160R Datasheet HTML 3Page - Intersil Corporation FSYC160R Datasheet HTML 4Page - Intersil Corporation FSYC160R Datasheet HTML 5Page - Intersil Corporation FSYC160R Datasheet HTML 6Page - Intersil Corporation FSYC160R Datasheet HTML 7Page - Intersil Corporation FSYC160R Datasheet HTML 8Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSYC160D, FSYC160R
UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
100
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
100
V
Continuous Drain Current
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
70
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
46
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
200
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
208
W
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
83
W
Derated Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/oC
Single Pulsed Avalanche Current, L = 100
µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . IAS
200
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
70
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ISM
200
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
100
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
5.0
V
TC = 25
oC
1.5
-
4.0
V
TC = 125
oC
0.5
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 80V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = 12V, ID = 70A
-
-
1.62
V
Drain to Source On Resistance
rDS(ON)12
ID = 46A,
VGS = 12V
TC = 25
oC
-
0.017
0.022
Ω
TC = 125
oC
-
-
0.034
Ω
Turn-On Delay Time
td(ON)
VDD = 50V, ID = 70A,
RL = 0.70Ω, VGS = 12V,
RGS = 2.35Ω
-
-
50
ns
Rise Time
tr
-
-
200
ns
Turn-Off Delay Time
td(OFF)
-
-
95
ns
Fall Time
tf
-
-
50
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 50V,
ID = 70A
-
-
370
nC
Gate Charge at 12V
Qg(12)
VGS = 0V to 12V
-
200
230
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
-
15
nC
Gate Charge Source
Qgs
-38
58
nC
Gate Charge Drain
Qgd
-
102
120
nC
Plateau Voltage
V(PLATEAU) ID = 70A, VDS = 15V
-
8
-
V
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
-
4400
-
pF
Output Capacitance
COSS
-
1500
-
pF
Reverse Transfer Capacitance
CRSS
-
585
-
pF
Thermal Resistance Junction to Case
R
θJC
-
-
0.6
oC/W
FSYC160D, FSYC160R



Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com