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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FSS130R датащи(PDF) 2 Page - Intersil Corporation |
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FSS130R датащи(HTML) 2 Page - Intersil Corporation |
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2 / 8 page  3-72 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSS130D, FSS130R UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 100 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V Continuous Drain Current TC = 25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 11 A TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 7A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 33 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation TC = 25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 50 W TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 20 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.40 W/oC Single Pulsed Avalanche Current, L = 100 µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS 33 A Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 11 A Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 33 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 100 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA TC = -55 oC - - 5.0 V TC = 25 oC 1.5 - 4.0 V TC = 125 oC 0.5 - - V Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V TC = 25 oC- - 25 µA TC = 125 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V TC = 25 oC - - 100 nA TC = 125 oC - 200 nA Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 11A - 2.43 V Drain to Source On Resistance rDS(ON)12 ID = 7A, VGS = 12V TC = 25 oC - 0.140 0.210 Ω TC = 125 oC - - 0.351 Ω Turn-On Delay Time td(ON) VDD = 50V, ID = 11A, RL = 4.55Ω, VGS = 12V, RGS = 7.5Ω - - 65 ns Rise Time tr - - 200 ns Turn-Off Delay Time td(OFF) - - 130 ns Fall Time tf - - 90 ns Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 50V, ID = 11A - - 63 nC Gate Charge at 12V Qg(12) VGS = 0V to 12V - 32 42 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - 2.4 nC Gate Charge Source Qgs - 8.0 11 nC Gate Charge Drain Qgd -17 23 nC Plateau Voltage V(PLATEAU) ID =11A, VDS = 15V - 9 - V Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz - 800 - pF Output Capacitance COSS - 300 - pF Reverse Transfer Capacitance CRSS -90- pF Thermal Resistance Junction to Case R θJC - - 2.5 oC/W Thermal Resistance Junction to Ambient R θJA -- 60 oC/W FSS130D, FSS130R |
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