FSL9230D3 datasheet(2/8 Pages) INTERSIL

2 / 8 page

3-180

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

FSL9230D, FSL9230R

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

-200

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-200

Continuous Drain Current

TC = 25

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Maximum Power Dissipation

TC = 25

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

TC = 100

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.20

W/oC

Single Pulsed Avalanche Current, L = 100

µH, (See Test Figure). . . . . . . . . . . . . . . . . . . .IAS

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(Distance >0.063in (1.6mm) from Case, 10s Max)

300

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 1mA, VGS = 0V

-200

Gate Threshold Voltage

VGS(TH)

VGS = VDS,

ID = 1mA

TC = -55

-7.0

TC = 25

-2.0

-6.0

TC = 125

-1.0

Zero Gate Voltage Drain Current

IDSS

VDS = -160V,,

VGS = 0V

TC = 25

oC-

µA

TC = 125

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

TC = 25

100

TC = 125

200

Drain to Source On-State Voltage

VDS(ON)

VGS = -12V, ID = 3A

-4.73

Drain to Source On Resistance

rDS(ON)12

ID =2A,

VGS = -12V

TC = 25

1.00

1.50

Ω

TC = 125

2.78

Ω

Turn-On Delay Time

td(ON)

VDD = -100V, ID = 3A,

RL = 33.3Ω, VGS = -12V,

RGS = 7.5Ω

Rise Time

130

Turn-Off Delay Time

td(OFF)

140

Fall Time

120

Total Gate Charge

Qg(TOT)

VGS = 0V to -20V

VDD = -100V,

ID = 3A

Gate Charge at 12V

Qg(12)

VGS = 0V to -12V

Threshold Gate Charge

Qg(TH)

VGS = 0V to -2V

2.5

Gate Charge Source

Qgs

5.5

8.7

Gate Charge Drain

Qgd

-13

Plateau Voltage

V(PLATEAU) ID = 3A, VDS = -15V

-6

Input Capacitance

CISS

VDS = -25V, VGS = 0V,

f = 1MHz

850

Output Capacitance

COSS

185

Reverse Transfer Capacitance

CRSS

-35-

Thermal Resistance Junction to Case

θJC

5.0

oC/W

Thermal Resistance Junction to Ambient

θJA

175

oC/W

FSL9230D, FSL9230R

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