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FSL110D датащи(PDF) 2 Page - Intersil Corporation

номер детали FSL110D
подробное описание детали  3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
PDF  8 Pages
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производитель  INTERSIL [Intersil Corporation]
домашняя страница  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSL110D датащи(HTML) 2 Page - Intersil Corporation

  FSL110D Datasheet HTML 1Page - Intersil Corporation FSL110D Datasheet HTML 2Page - Intersil Corporation FSL110D Datasheet HTML 3Page - Intersil Corporation FSL110D Datasheet HTML 4Page - Intersil Corporation FSL110D Datasheet HTML 5Page - Intersil Corporation FSL110D Datasheet HTML 6Page - Intersil Corporation FSL110D Datasheet HTML 7Page - Intersil Corporation FSL110D Datasheet HTML 8Page - Intersil Corporation  
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4-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSL110D, FSL110R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
100
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
100
V
Continuous Drain Current
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
3.5
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
2.5
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
10.5
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
15
W
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
6W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.12
W/oC
Single Pulsed Avalanche Current, L = 100
µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS
10.5
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
3.5
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
10.5
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
100
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
5.0
V
TC = 25
oC
1.5
-
4.0
V
TC = 125
oC
0.5
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 80V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = 12V, ID = 3.5A
-
2.21
V
Drain to Source On Resistance
rDS(ON)12
ID = 2.5A,
VGS = 12V
TC = 25
oC
-
0.520
0.600
Ω
TC = 125
oC
-
-
0.960
Ω
Turn-On Delay Time
td(ON)
VDD = 50V, ID = 3.5A,
RL = 14.3Ω, VGS 12V,
RGS = 7.5Ω
-
-
30
ns
Rise Time
tr
-
-
60
ns
Turn-Off Delay Time
td(OFF)
-
-
30
ns
Fall Time
tf
-
-
55
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 50V,
ID = 3.5A
-
-
15
nC
Gate Charge at 12V
Qg(12)
VGS = 0V to 12V
-
7.6
8.5
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
-
0.62
nC
Gate Charge Source
Qgs
-
2.2
2.8
nC
Gate Charge Drain
Qgd
-
4.3
4.9
nC
Plateau Voltage
V(PLATEAU) ID = 3.5A, VDS = 15V
-
8
-
V
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
-
155
-
pF
Output Capacitance
COSS
-70-
pF
Reverse Transfer Capacitance
CRSS
-20-
pF
Thermal Resistance Junction to Case
R
θJC
-
-
8.3
oC/W
Thermal Resistance Junction to Ambient
R
θJA
-
-
175
oC/W
FSL110D, FSL110R



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