FZT849_15 datasheet(2/3 Pages) KEXIN

2 / 3 page

SMD Type

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Transistors

NPN Transistors

FZT849 (KZT849)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

Collector- emitter breakdown voltage

VCER

Ic= 1 uA， RB ≤ 1KΩ

Collector- emitter breakdown voltage

VCEO

Ic= 10 mA， IB= 0

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

VCB= 70 V , IE= 0

0.05

VCB= 70 V , IE= 0 , Ta = 100℃

VCB= 70 V , IE= 0

VCB= 70 V , IE= 0 , Ta = 100℃

Emitter cut-off current

IEBO

VEB= 6V , IC=0

IC=500mA, IB=20mA

(Note.1)

IC=1 A, IB=20mA

(Note.1)

110

IC=2 A, IB=20mA

(Note.1)

214

IC=6.5 A, IB=300mA

(Note.1)

350

Base - emitter saturation voltage

VBE(sat) IC=6.5 A, IB=300mA

(Note.1)

1.2

Base - emitter turn-on voltage

VBE(on) VCE= 1V, IC= 6.5A (Note.1)

1.13

hFE(1)

VCE= 1V, IC= 10mA

100

hFE(2)

VCE= 1V, IC= 1 A

100

300

hFE(3)

VCE= 1V, IC= 7 A

100

hFE(4)

VCE= 2V, IC= 20 A

ton

toff

630

Collector output capacitance

Cob

VCB= 10V, f=1MHz (Note.1)

Transition frequency

VCE= 10V, IC= 100mA,f=50MHz

100

MHz

Switching Times

IC=1 A, VCC=10V

IB1=100mA, IB2=100mA

DC current gain

(Note.1)

Collector-base cut-off current

ICBO

Collector-emitter cut-off current

( R ≤ 1KΩ)

ICER

Collector-emitter saturation voltage

VCE(sat)

Note.1:Pulse Width=300us. Duty cycle ≤2%

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