2SA1797 datasheet(1/2 Pages) MAKOSEMI

номер детали	2SA1797

подробное описание детали	Low saturation voltage

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производитель	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

домашняя страница	http://www.makosemi.hk/

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Plastic-Encapsulate Transistors

FEATURES

• Low saturation voltage

• Excellent DC current gain characteristics

• Complements to 2SC4672

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-6

V

Collector Current -Continuous

IC

-2

A

Collector Power dissipation

PC

0.5

W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-50μA, IE=0

-50

V

Collector-emitter breakdown voltage

VCEO

IC=-1mA, IB=0

-50

V

Emitter-base breakdown voltage

VEBO

IE=-50μA, IC=0

-6

V

Collector cut-off current

ICBO

VCB=-50V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V, IC=-500mA

82

270

Collector-emitter saturation voltage

VCE(sat)

IC=-1A, IB=-50mA

-0.35

V

Transition frequency

fT

VCE=-2V, IC=-0.5A, f=100MHz

200

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

36

pF

CLASSIFICATION OF hFE

Rank

P

Q

Range

80-180

120-270

Marking

AGP

AGQ

2SA1797 (PNP)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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