MSA4P21 datasheet(2/6 Pages) BWTECH

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MSA4P21

N & P-Channel 40-V (D-S) MOSFET

Publication Order Number: [MSA4P21]

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-20

VGS

Gate-Source Voltage

±8

Continuous Drain Current

a (T

A =25°C)

-8.8

Continuous Drain Current

a (T

A =70°C)

-7

IDM

Pulsed Drain Current

-40

Continuous Source Current (Diode Conduction)

-5

Power Dissipation

a (T

A =25°C)

Power Dissipation

a (T

A =70°C)

1.9

TJ/TSTG

Operating Junction and Storage Temperature

-55 to 150

°C

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RθJA

Maximum Junction-to-Ambient

a (t <= 10 sec)

°C/W

Maximum Junction-to-Ambient

a (Steady-State)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = -250μA

-0.4

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±8 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = -16 V , VGS = 0 V

VDS = -16 V , VGS = 0 V , TJ= 55°C

-1

-25

ID(on)

On-State Drain Current

VDS = -5 V, VGS = -4.5 V

-12

DS(on)

Drain-Source On-Resistance

VGS = -4.5 V, ID = -7 A

VGS = -2.5 V, ID = -5.6 A

gfs

Forward Tranconductance

VGS = -15 V, ID = -7 A

VSD

Diode Forward Voltage

IS = -2.5 A , VGS = 0 V

-0.68

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