MS49P63 datasheet(2/6 Pages) BWTECH

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MS49P63

P-Channel 60-V (D-S) MOSFET

Publication Order Number: [MS49P63]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-60

VGS

Gate-Source Voltage

±20

Continuous Drain Current

a (T

A =25°C)

-3.5

Continuous Drain Current

a (T

A =70°C)

-2.7

IDM

Pulsed Drain Current

-15

Continuous Source Current (Diode Conduction)

-2.4

Power Dissipation

a (T

A =25°C)

2.1

Power Dissipation

a (T

A =70°C)

1.3

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RθJA

Maximum Junction-to-Ambient C/W

a (t <= 10 sec)

62.5

°C/W

Maximum Junction-to-Ambient C/W

a (Steady-State)

110

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = -250μA

-1.0

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±20 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = -48 V , VGS = 0 V

VDS = -48 V , VGS = 0 V , TJ= 55°C

-1

-25

ID(on)

On-State Drain Current

VDS = -5 V, VGs = -10 V

-5

IDS(on)

Drain-Source On-Resistance

VDS = -10 V, ID = -2.8 A

VDS = -4.5 V, ID = -2.3 A

120

180

gfs

Forward Tranconductance

VGS = -15 V, ID = -2.8 A

VSD

Diode Forward Voltage

IS = -1.2 A , VGS = 0 V

-0.87

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