MS48P41 datasheet(2/5 Pages) BWTECH

2 / 5 page

MS48P41

P-Channel 40-V (D-S) MOSFET

Publication Order Number: [MS48P41]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-40

VGS

Gate-Source Voltage

±20

Continuous Drain Current @ TC=25°C

-9.0

IDM

Pulsed Drain Current

±50

Continuous Source Current (Diode Conduction)

-7.3

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

Power Dissipation@ TC=25°C

NOTE:

1. Repetitive rating; pulse width limited by maximum junction temperature.

Thermal characteristics (Tc=25°C unless otherwise noted)

Symbol

Parameter

Maximum

Units

RθJA

Maximum Junction-to-Ambient

°C/W

RθJC

Maximum Junction-to-Case

Static Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VGS

VDS = VGS, ID = -250μA

-1.0

IGSS

VDS = 0 V , VGS = ±20 V

±100

IDSS

VDS = -24 V , VGS = 0 V

VDS = -24 V , VGS = 0 V , TJ= 55°C

-1

-5

ID(on)

VDS = 5 V, VGS= 10 V

-50

RDS(on)

VDS = 10 V, ID = -9 A

VDS = -4.5 V, ID = -7.2 A

gfs

VGS = -15 V, ID = -9 A

VSD

IS = -2.1 A, VGS = 0 V

-0.7

Dynamic Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VDS = -15 V , ID= -4.5 A,

VGS = -9 V

15.3

Qgs

5.2

Qgd

5.8

td(on)

VDG = -15 V , ID = -1 A,

VGEN = -10 V , RL = 15 Ω

RG = 6 Ω

td(off)

MS48P41 датащи(PDF) 2 Page - Bruckewell Technology LTD

MS48P41 датащи(HTML) 2 Page - Bruckewell Technology LTD

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL