MS23P39 datasheet(2/6 Pages) BWTECH

2 / 6 page

MS23P39

P-Channel 30-V (D-S) MOSFET

Publication Order Number: [MS23P39]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-30

VGS

Gate-Source Voltage

±8

Continuous Drain Current

a (T

A =25°C)

-3.9

Continuous Drain Current

a (T

A =70°C)

-3.1

IDM

Pulsed Drain Current

-1.0

Continuous Source Current (Diode Conduction)

-1.7

Power Dissipation

a (T

A =25°C)

1.3

Power Dissipation

a (T

A =70°C)

0.8

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Maximum

Units

RθJA

Maximum Junction-to-Ambient C/W

a (t <= 10 sec)

100

°C/W

Maximum Junction-to-Ambient C/W

a (Steady-State)

166

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID=-250μA

-0.4

IGSS

Gate-Body Leakage

VDS=0 V , VGS= ±8 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS= -24 V , VGS= 0 V

VDS= -24 V , VGS= 0 V , TJ= 55°C

-1

-25

ID(on)

On-State Drain Current

VDS = -5V, VGs= -4.5 V

-5

DS(on)

Drain-Source On-Resistance

VDS = -4.5V, ID= -2.5 A

VDS = -2.5V, ID= -2 A

gfs

Forward Tranconductance

VGS = -15V, ID= -2.5 A

VSD

Diode Forward Voltage

IS = -0.9A, VGS= 0 V

-0.8

MS23P39 датащи(PDF) 2 Page - Bruckewell Technology LTD

MS23P39 датащи(HTML) 2 Page - Bruckewell Technology LTD

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL