MMBTA42 datasheet(1/2 Pages) MAKOSEMI

номер детали	MMBTA42

подробное описание детали	High breakdown voltage

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производитель	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

домашняя страница	http://www.makosemi.hk/

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Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

High breakdown voltage

Low collector-emitter saturation voltage

Complementary to MMBTA92 (PNP)

Maximum Ratings (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Units

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

300

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

0.3

A

Collector Power dissipation

PC

0.35

W

Thermal Resistance, junction to Ambient

RӨJA

357

/mW

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

VCBO

IC= 100μA,

IE=0

300

V

Collector-emitter breakdown voltage

VCEO

IC= 1mA, IB=0

300

V

Emitter-base breakdown voltage

VEBO

IE= 100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=200V, IE=0

0.25

μA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

μA

DC current gain

hFE(1)

VCE= 10V, IC= 1mA

60

hFE(2)

VCE= 10V, IC=10mA

100

200

hFE(3)

VCE=10V, IC=30mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=20mA, IB= 2mA

0.2

V

Base-emitter saturation voltage

VBE(sat)

IC= 20mA, IB=2mA

0.9

V

Transition frequency

fT

VCE= 20V, IC= 10mA,

f=30MHz

50

MHz

MMBTA42(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MARKING: 1D

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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