MMBT2222 datasheet(1/2 Pages) MAKOSEMI

номер детали	MMBT2222

подробное описание детали	Epitaxial planar die construction

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производитель	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

домашняя страница	http://www.makosemi.hk/

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1 / 2 page

MAKO SEMICONDUCTOR CO.,LIMITED

SOT-23 Plastic-Encapsulate Transistors

MMBT2222A

TRANSISTOR (NPN)

FEATURES

Epitaxial planar die construction

Complementary PNP Type available(MMBT2907A)

MARKING: 1P

/

W1P

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

75

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

600

mA

PC

Collector Dissipation

300

mW

RΘJA

Thermal Resistance, Junction to Ambient

417

℃/W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55

~+150

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 10μA, IE=0

75

V

Collector-emitter breakdown voltage

V(BR)CEO

*

IC= 10mA, IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=60V, IE=0

0.01

μA

Collector cut-off current

ICEX

VCE=30V,VBE(off)=3V

0.01

μA

Emitter cut-off current

IEBO

VEB= 3V, IC=0

0.1

μA

hFE(1)

*

VCE=10V, IC= 150mA

100

300

hFE(2)

VCE=10V, IC= 0.1mA

40

DC current gain

hFE(3)

*

VCE=10V, IC= 500mA

42

Collector-emitter saturation voltage

VCE(sat)

*

IC=500 mA, IB= 50mA

IC=150 mA, IB=15mA

1

0.3

V

Base-emitter saturation voltage

VBE(sat)

*

IC=500 mA, IB= 50mA

IC=150 mA, IB=15mA

2.0

1.2

V

Transition frequency

fT

VCE=20V, IC= 20mA,

f=100MHz

300

MHz

Delay time

td

10

n

s

Rise time

tr

VCC=30V, VBE(off)=-0.5V

IC=150mA , IB1= 15mA

25

n

s

Storage time

tS

225

n

s

Fall time

tf

VCC=30V, IC=150mA

IB1=-IB2=15mA

60

n

s

*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.

SOT-23

1. BASE

2.EMITTER

3.COLLECTOR

B,Nov,2011

℃

MAKO SEMICONDUCTOR CO.,LIMITED

Аналогичный номер детали - MMBT2222

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	MMBT2222	47Kb / 8P	NPN switching transistor 2000 Apr 11
Samsung semiconductor	MMBT2222	67Kb / 2P	NPN (GENERAL PURPOSE TRANSISTOR)
Diotec Semiconductor	MMBT2222	60Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
Weitron Technology	MMBT2222	367Kb / 6P	NPN General Purpose Transistors
Fairchild Semiconductor	MMBT2222	49Kb / 4P	NPN General Purpose Amplifier

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Аналогичное описание - MMBT2222

производитель	номер детали	датащи	подробное описание детали
Diodes Incorporated	DPLS160-7	171Kb / 4P	Epitaxial Planar Die Construction Rev 4
Bruckewell Technology L...	DTAXXXXCA_R1	478Kb / 6P	Epitaxial planar die construction.
MAKO SEMICONDUCTOR CO.,...	MMBT2369	65Kb / 1P	Epitaxial planar die construction.
MAKO SEMICONDUCTOR CO.,...	MMBT2907	119Kb / 2P	Epitaxial planar die construction.
Yea Shin Technology Co....	MMBT3904DW	831Kb / 3P	Epitaxial planar die construction
Shenzhen Luguang Electr...	MMBT2222A	2Mb / 3P	Epitaxial planar die construction
SHIKUES Electronics	MMDT5401	853Kb / 3P	Epitaxial Planar Die Construction
SHIKUES Electronics	MMDT5551	772Kb / 3P	Epitaxial Planar Die Construction
Shanghai Leiditech Elec...	MMBT2222A	1Mb / 5P	Epitaxial planar die construction
Shanghai Leiditech Elec...	MMBT2907A	563Kb / 4P	Epitaxial planar die construction

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Аналогичный номер детали - MMBT2222

Аналогичное описание - MMBT2222

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