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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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GMS81C2012K датащи(PDF) 18 Page - Hynix Semiconductor |
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GMS81C2012K датащи(HTML) 18 Page - Hynix Semiconductor |
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18 / 107 page  GMS81C2012/GMS81C2020 HYUNDAI MicroElectronics 18 MAR. 2000 Ver 1.00 7. ELECTRICAL CHARACTERISTICS 7.1 Absolute Maximum Ratings Supply voltage ............................................. -0.3 to +7.0 V Storage Temperature .................................... -40 to +85 °C Voltage on Normal voltage pin with respect to Ground (VSS) ..............................................................-0.3 to VDD+0.3 V Voltage on High voltage pin with respect to Ground (VSS) ............................................................ -45V to VDD+0.3 V Maximum current out of VSS pin .......................... 150 mA Maximum current into VDD pin .............................. 80 mA Maximum current sunk by (IOL per I/O Pin) .......... 20 mA Maximum output current sourced by (IOH per I/O Pin) ................................................................................... 8 mA Maximum current ( ΣI OL) ...................................... 100 mA Maximum current ( ΣI OH)........................................ 50 mA Note: Stresses above those listed under “Absolute Maxi- mum Ratings” may cause permanent damage to the de- vice. This is a stress rating only and functional operation of the device at any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for ex- tended periods may affect device reliability. 7.2 Recommended Operating Conditions 7.3 A/D Converter Characteristics (TA=25°C, VDD=5V, VSS=0V, AVDD=5.12V, AVSS=0V @fXIN =4MHz) Parameter Symbol Condition Specifications Unit Min. Max. Supply Voltage VDD fXI = 4.5 MHz 2.7 5.5 V Operating Frequency fXIN VDD = VDD 14.5 MHz Operating Temperature TOPR -40 85 °C Parameter Symbol Condition Specifications Unit Min. Typ.1 1. Data in “Typ” column is at 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. Max. Analog Power Supply Input Voltage Range AVDD AVSS - AVDD V Analog Input Voltage Range VAN AVSS-0.3 AVDD+0.3 V Current Following Between AVDD and AVSS IAVDD - −200 uA Overall Accuracy CAIN - ±1.5 ±2 LSB Non-Linearity Error NNLE - ±1.5 ±2 LSB Differential Non-Linearity Error NDNLE - ±0.5 ±1LSB Zero Offset Error NZOE - ±0.5 ±1.5 LSB Full Scale Error NFSE - ±0.5 ±1LSB Gain Error NNLE - ±0.5 ±1LSB Conversion Time TCONV fXIN=4MHz -- 20 us |
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