Features

• High Surge Capability

Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

MBRT20045(R) MBRT20060(R)

Unit

Repetitive peak reverse voltage

45

60

V

RMS reverse voltage

32

42

V

DC blocking voltage

45

60

V

Conditions

100

Silicon Power

Schottky Diode

MBRT200100(R)

80

56

MBRT20080(R)

70

100

80

MBRT20045 thru MBRT200100R

DC blocking voltage

45

60

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRT20045(R) MBRT20060(R)

Unit

Average forward current (per

pkg)

200

200

A

Maximum instantaneous

forward voltage (per leg)

0.70

0.75

11

10

10

30

30

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.45

0.45

°C/W

-55 to 150

200

200

Peak forward surge current

(per leg)

1500

1500

1500

1500

A

10

10

0.45

0.45

mA

V

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

30

-55 to 150

30

Conditions

-55 to 150

0.84

0.84

MBRT200100(R)

11

MBRT20080(R)

100

80

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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