MBRF60045 datasheet(1/3 Pages) GENESIC

номер детали	MBRF60045

подробное описание детали	Silicon Power Schottky Diode

PDF	3 Pages

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производитель	GENESIC [GeneSiC Semiconductor, Inc.]

домашняя страница	http://www.genesicsemi.com/

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VRRM = 45 V - 100 V

IF(AV) = 600 A

Features

• High Surge Capability

TO-244AB Package

• Not ESD Sensitive

Parameter

Symbol

MBRF60045(R) MBRF60060(R)

Unit

Repetitive peak reverse

voltage

VRRM

45

60

V

RMS reverse voltage

VRMS

32

42

V

Conditions

100

70

MBRF60045 thru MBRF600100R

MBRF600100(R)

80

57

MBRF60080(R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Silicon Power

Schottky Diode

• Types from 45 V to 100 V VRRM

DC blocking voltage

VDC

45

60

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBRF60045(R) MBRF60060(R)

Unit

Average forward current

(per pkg)

IF(AV)

600

A

Maximum forward voltage

(per leg)

0.75

0.80

11

10

50

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.12

°C/W

4000

A

Tj = 100 °C

10

mA

V

-55 to 150

100

80

-55 to 150

MBRF600100(R)

11

MBRF60080(R)

0.12

Tj = 150 °C

0.12

0.84

50

TC = 125 °C

600

tp = 8.3 ms, half sine

4000

Tj = 25 °C

IFM = 250 A, Tj = 25 °C

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Reverse current at rated DC

blocking voltage (per leg)

IR

VF

Peak forward surge current

(per leg)

IFSM

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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MBRF60045 датащи(PDF) 1 Page - GeneSiC Semiconductor, Inc.

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