HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6333-B

Issued Date : 1992.11.18

Revised Date : 2000.10.01

Page No. : 1/4

HSMC Product Specification

HMPSA64

PNP SILICON TRANSISTOR

Description

The HMPSA64 is designed for application requiring extremely high

current gain at collector currents to 500mA.

Features

• High D.C Current Gain

• For Complementary Use with NPN Type HMPSA14

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -30 V

VCEO Collector to Emitter Voltage .................................................................................... -30 V

VEBO Emitter to Base Voltage .......................................................................................... -10 V

IC Collector Current ...................................................................................................... -500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-30

-

-

V

IC=-100uA, IE=0

BVCES

-30

-

-

V

IC=-100uA, IB=0

BVEBO

-10

-

-

V

IE=-10uA, IC=0

ICBO

-

-

-100

nA

VCB=-30V, IE=0

IEBO

-

-

-100

nA

VEB=-10V, IC=0

*VCE(sat)

-

-

-1.5

V

IC=-100mA, IB=-0.1mA

VBE(on)

-

-

-2

V

IC=-100mA, VCE=-5V

*hFE1

10

-

-

K

IC=-10mA, VCE=-5V

*hFE2

20

-

-

K

IC=-100mA, VCE=-5V

fT

125

-

-

pF

IC=-100mA, VCE=-5V, f=100MHZ

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%