| поискавой системы для электроныых деталей |
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HMBD2004 датащи(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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HMBD2004 датащи(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
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1 / 2 page ![]() HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6858 Issued Date : 1994.01.25 Revised Date : 2002.10.25 Page No. : 1/2 HMBD2004, HMBD2004C, HMBD2004S HSMC Product Specification HMBD2004\C\S Description The HMBD2004\C\S are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23 package. Features • Small plastic SMD package • Switching speed: max. 50 nS • General application: Continuous reverse voltage: Max. 240 V Repetitive peak reverse voltage: Max. 300 V Repetitive peak forward current: Max. 625 mA Absolute Maximum Ratings (Ta=25 °C) Characteristic Symbol Value Unit HMBD2004 Repetitive Peak Reverse Voltage 300 HMBD2004C Repetitive Peak Reverse Voltage 300 HMBD2004S Repetitive Peak Reverse Voltage VRRM 300 V HMBD2004 Continuous reverse voltage 240 HMBD2004C Continuous reverse voltage 240 HMBD2004S Continuous reverse voltage VR 240 V Forward Continuous Current at Ta=25 °C lF 225 mA Repetitive Peak Forward Current at Ta=25 °C IFRM 625 mA Surge Forward Current at t =1mS, Ta=25 °C IFSM 1 A Power Dissipation PD 250 Max mV Junction Temperature Tj 150 °C Storage Temperature Range Tstg -65~+150 °C Characteristics (Ta=25 °C) Characteristic Symbol Condition Min Max Unit Forward Voltage VF IF=100mA - 1 V HMBD2004 Reverse Current VR=240V - 100 HMBD2004C Reverse Current VR=240V - 100 HMBD2004S Reverse Current IR VR=240V - 100 nA Total Capacitance CT VR=0V, f=1MHz 5 - pF Reverse Recovery Time Trr IF=30mA to IR=30mA RL=100 Ω measured at IR=3mA 50 - nS BV R BV R IR=100uA 250 - V SOT-23 |
Аналогичный номер детали - HMBD2004 |
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Аналогичное описание - HMBD2004 |
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