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HM879 датащи(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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HM879 датащи(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
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1 / 3 page ![]() HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2002.02.26 Page No. : 1/3 HM879 HSMC Product Specification HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. Features • Charger-up time is about 1 mS faster than of a germanium transistor. • Small saturation voltage can bring less power dissipation and flashing times. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25 °C) ....................................................................................... 1 W • Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage....................................................................................... 30 V BVCEX Collector to Emitter Voltage .................................................................................... 20 V BVCEO Collector to Emitter Voltage.................................................................................... 10 V BVEBO Emitter to Base Voltage............................................................................................ 6 V IC Collector Current............................................................................................................... 3 A IC Collector Current (Pluse) .................................................................................................. 5 A Electrical Characteristics (Ta=25 °C) Symbol Min. Typ. Max. Unit Test Condition BVCEO 10 - - V IC=1mA BVEBO 6 - - V IE=10uA BVCBO 30 - - V IC=10uA BVCEX 20 - - V IC=1mA, VBE=3V ICBO - - 100 nA VCB=20V IEBO - - 100 nA VBE=4V *VCE(sat) - 0.3 0.4 V IC=3A, IB=60mA *hFE 140 210 400 VCE=2V, IC=3A fT - 200 - MHz VCE=10V, IC=50mA Cob - 30 - pF VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% SOT-89 |
Аналогичный номер детали - HM879 |
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Аналогичное описание - HM879 |
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