HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE9510-B

Issued Date : 1998.04.09

Revised Date : 2000.10.01

Page No. : 1/3

HSMC Product Specification

HM42

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM42 is designed for application as a video output to drive

color CRT, or as a dialer circuit in electronics telephone.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ...................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... 300 V

VCEO Collector to Emitter Voltage ................................................................................... 300 V

VEBO Emitter to Base Voltage ............................................................................................. 6 V

IC Collector Current ...................................................................................................... 500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

300

-

-

V

IC=100uA

BVCEO

300

-

-

V

IC=1mA

BVEBO

6

-

-

V

IE=10uA

ICBO

-

-

100

nA

VCB=260V

IEBO

-

-

100

nA

VEB=6V

*VCE(sat)

-

-

500

mV

IC=20mA, IB=2mA

*VBE(sat)

-

-

900

mV

IC=20mA, IB=2mA

*hFE1

25

-

-

VCE=10V, IC=1mA

*hFE2

40

-

-

VCE=10V, IC=10mA

*hFE3

40

-

-

VCE=10V, IC=30mA

fT

50

-

-

MHz

VCE=20V, IC=10mA, f=100MHz

Cob

-

3

-

pF

VCB=20V

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%