HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6450

Issued Date : 1992.11.25

Revised Date : 2002.04.18

Page No. : 1/3

HM28S

HSMC Product Specification

HM28S

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM28S is a NPN silicon transistor, designed for use in general-purpose

SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier

applications.

Features

• Excellent hFE Linearity

• High DC Current Gain

• High Power Dissipation

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................................. 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C)............................................................................................. 850 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage..................................................................................................... 40 V

VCEO Collector to Emitter Voltage ................................................................................................. 20 V

VEBO Emitter to Base Voltage.......................................................................................................... 6 V

IC Collector Current ..................................................................................................................... 1.25 A

IB Base Current ............................................................................................................................. 0.4 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

-

V

IC=100uA, IE=0

BVCEO

20

-

-

V

IC=1mA, IB=0

BVEBO

6

-

-

V

IE=100uA, IC=0

ICBO

-

-

100

nA

VCB=35V, IE=0

IEBO

-

-

100

nA

VEB=6V, IC=0

*VCE(sat)

-

-

0.55

V

IC=600mA, IB=20mA

*hFE1

290

-

-

VCE=1V, IC=1mA

*hFE2

300

-

1000

VCE=1V, IC=0.1A

hFE3

300

-

-

VCE=1V, IC=0.3A

hFE4

300

-

-

VCE=1V, IC=0.5A

fT

100

-

-

MHz

VCE=10V, IC=50mA, f=1MHz

Cob

-

9

-

pF

VCB=10V, f=1MHz, IE=0

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classification of hFE2

Rank

B

C

D

Range

300-550

500-700

650-1000

TO-92