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MSA-2011 датащи(PDF) 2 Page - Agilent(Hewlett-Packard)

номер детали MSA-2011
подробное описание детали  Silicon Bipolar RFIC Amplifiers
PDF  8 Pages
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производитель  HP [Agilent(Hewlett-Packard)]
домашняя страница  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

MSA-2011 датащи(HTML) 2 Page - Agilent(Hewlett-Packard)

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6-471
Absolute Maximum Ratings[1]
MSA-
MSA-
MSA-
Parameter
2011
2035
2085, -2086
Device Current
50 mA
60 mA
60 mA
Power Dissipation[2,3]
250mW[3a]
325mW[3b]
325mW[3c]
RF Input Power
+13dBm
+13dBm
+13dBm
Junction
150
°C
200
°C
150
°C
Temperature
Storage Temperature
-65 to 150
°C
-65 to 200
°C
-65 to 150
°C
Thermal
500
°C/W
155
°C/W
115
°C/W
Resistance:
θ
jc
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3a. Derate at 2.0 mW/
°C for T
C > 25°C.
b. Derate at 6.5 mW/
°C for T
C > 149°C.
c. Derate at 8.7 mW/
°C for T
C > 112°C.
Typical Biasing
Configuration
Electrical Specifications, TA = 25°C
ID = 32 mA, Zo = 50 Ω
MSA-2011
MSA-2035
MSA-2085, -2086
Parameters and
Symbol
Test Conditions
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
GP
Power Gain
(|S21|2)
f = 0.1 GHz
dB
18.9
17.8
19.2
19.8
19.2
f = 0.5 GHz
18.1
18.7
18.3
f = 1.0 GHz
15.0
16.2
17.3
15.0
16.6
∆G
P
Gain Flatness
f = 0.1 to 0.6 GHz
dB
± 0.6
± 0.4
± 1.0
± 0.6
f3dB
3 dB Bandwidth
GHz
1.0
1.1
1.1
VSWR
Input VSWR
f = 0.1 to 3.0 GHz
1.3:1
1.3:1
1.2:1
Output VSWR
f = 0.1 to 3.0 GHz
1.4:1
1.4:1
1.5:1
P1dB
Power Output @
1 dB Gain
Compression:
f = 1.0 GHz
dBm
9.0
9.5
9.0
NF
50
Ω Noise Figure
f = 1.0 GHz
dB
4.3
3.7
3.7
IP3
Third Order
Intercept
Point
f = 1.0 GHz
dBm
22
22
22
td
Group Delay
f = 1.0 GHz
psec
143
143
143
VD
Device Voltage
TC = 25°C
V
4.0
5.0
6.0
4.5
5.0
5.5
4.3
5.0
6.3
dV/dT
Device Voltage
Temperature
mV/
°C
-9.3
-9.3
-9.3
Coefficient
Note:
1. Refer to “Tape and Reel Packaging for Surface Mount Devices.”
OUTPUT
Rbias
V
≥ 7 V
CC
V = 5 V
d
INPUT
4
1
2
3
R
=
bias
I d
DC BLOCK
RF CHOKE
CC
d
V
– V
MSA



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