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MSA-2011 датащи(PDF) 2 Page - Agilent(Hewlett-Packard) |
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MSA-2011 датащи(HTML) 2 Page - Agilent(Hewlett-Packard) |
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2 / 8 page ![]() 6-471 Absolute Maximum Ratings[1] MSA- MSA- MSA- Parameter 2011 2035 2085, -2086 Device Current 50 mA 60 mA 60 mA Power Dissipation[2,3] 250mW[3a] 325mW[3b] 325mW[3c] RF Input Power +13dBm +13dBm +13dBm Junction 150 °C 200 °C 150 °C Temperature Storage Temperature -65 to 150 °C -65 to 200 °C -65 to 150 °C Thermal 500 °C/W 155 °C/W 115 °C/W Resistance: θ jc Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3a. Derate at 2.0 mW/ °C for T C > 25°C. b. Derate at 6.5 mW/ °C for T C > 149°C. c. Derate at 8.7 mW/ °C for T C > 112°C. Typical Biasing Configuration Electrical Specifications, TA = 25°C ID = 32 mA, Zo = 50 Ω MSA-2011 MSA-2035 MSA-2085, -2086 Parameters and Symbol Test Conditions Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. GP Power Gain (|S21|2) f = 0.1 GHz dB 18.9 17.8 19.2 19.8 19.2 f = 0.5 GHz 18.1 18.7 18.3 f = 1.0 GHz 15.0 16.2 17.3 15.0 16.6 ∆G P Gain Flatness f = 0.1 to 0.6 GHz dB ± 0.6 ± 0.4 ± 1.0 ± 0.6 f3dB 3 dB Bandwidth GHz 1.0 1.1 1.1 VSWR Input VSWR f = 0.1 to 3.0 GHz 1.3:1 1.3:1 1.2:1 Output VSWR f = 0.1 to 3.0 GHz 1.4:1 1.4:1 1.5:1 P1dB Power Output @ 1 dB Gain Compression: f = 1.0 GHz dBm 9.0 9.5 9.0 NF 50 Ω Noise Figure f = 1.0 GHz dB 4.3 3.7 3.7 IP3 Third Order Intercept Point f = 1.0 GHz dBm 22 22 22 td Group Delay f = 1.0 GHz psec 143 143 143 VD Device Voltage TC = 25°C V 4.0 5.0 6.0 4.5 5.0 5.5 4.3 5.0 6.3 dV/dT Device Voltage Temperature mV/ °C -9.3 -9.3 -9.3 Coefficient Note: 1. Refer to “Tape and Reel Packaging for Surface Mount Devices.” OUTPUT Rbias V ≥ 7 V CC V = 5 V d INPUT 4 1 2 3 R = bias I d DC BLOCK RF CHOKE CC d V – V MSA |
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