IXTH50P10 datasheet(1/4 Pages) IXYS

номер детали	IXTH50P10

подробное описание детали	Standard Power MOSFET

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

-100

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

-100

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

- 50

A

I

DM

T

C = 25°C, pulse width limited by TJM

- 200

A

I

A

T

C = 25°C

- 50

A

E

AS

T

C = 25°C30

mJ

P

D

T

C = 25°C

300

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-247

6

g

TO-268

5

g

DS98905E(6/08)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = - 250 μA

-100

V

GS(th)

V

DS = VGS, ID = - 250μA

- 3.0

- 5.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = 0.8 • VDSS

- 25

μA

V

GS = 0V

T

J = 125°C

-1 mA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

55 m

Ω

Standard

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

V

DSS

= - 100V

I

D25

= - 50A

R

DS(on) ≤

≤≤≤≤

55m

Ω

G = Gate

D = Drain

S = Source

TAB = Drain

IXTH50P10

IXTT50P10

TO-268 (IXTT)

G

S

(TAB)

TO-247 (IXTH)

(TAB)

S

G

D

Features

International standard packages

JEDEC TO-247 AD

Low R

DS(ON)

HDMOSTM process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance (< 5nH)

- easy to drive and to protect

Applications

High side switching

Push-pull amplifiers

DC Choppers

Automatic test equipment

Advantages

Easy to mount with 1 screw

(isolated mounting screw hole)

Space savings

High power density

Аналогичный номер детали - IXTH50P10

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXTH50P10	79Kb / 2P	Standard Power MOSFET
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