IXTH24P20 datasheet(4/5 Pages) IXYS

номер детали	IXTH24P20

подробное описание детали	Standard Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

Logo

4 / 5 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 24P20

Fig. 9. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

100

120

140

160

G - nanoCoulombs

DS = -100V

D = -12A

G = -1mA

Fig. 7. Transconductance

-30

-27

-24

-21

-18

-15

-12

-9

-6

-3

D - Amperes

J = -40ºC

25ºC

125ºC

Fig. 8. Source Current vs.

Source-To-Drain Voltage

-80

-70

-60

-50

-40

-30

-20

-10

-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

S D - Volts

J = 125ºC

J = 25ºC

Fig. 12. Forw ard-Bias Safe

Operating Area

100

1000

100

1000

D S - Volts

100µs

1ms

C = 25ºC

J = 150ºC

RDS(on) Limit

10ms

Fig. 11. Capacitance

100

1000

10000

-40

-35

-30

-25

-20

-15

-10

-5

D S - Volts

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Tem perature dependence of

Breakdow n and Threshole Voltage

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

-50

-25

100

125

150

J - Degrees Centigrade

VGS(th)

BVDSS

IXTH24P20 датащи(PDF) 4 Page - IXYS Corporation

IXTH24P20 датащи(HTML) 4 Page - IXYS Corporation

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL