IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA300N04T2

IXTP300N04T2

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

55

94

S

C

iss

10.7

nF

C

oss

V

1630

pF

C

rss

263

pF

t

d(on)

22

ns

t

r

17

ns

t

d(off)

32

ns

t

f

13

ns

Q

g(on)

145

nC

Q

gs

V

44

nC

Q

gd

36

nC

R

thJC

0.31

°C/W

R

thCH

TO-220

0.50

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

300

A

I

SM

Repetitive, Pulse width limited by T

JM

1000

A

V

SD

I

1.3

V

t

rr

53

ns

I

RM

1.8

A

Q

RM

47.7

nC

2. On through-hole packages, R

location must be 5mm or less from the package body.

Resistive Switching Times

V

R

I

-di/dt = 100A/

μs

V

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

TO-263 (IXTA) Outline

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

TO-220 (IXTP) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.