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2 - 4

20110119a

FII 40-06D

IXYS reserves the right to change limits, test conditions and dimensions.

Diode

Symbol

Conditions

Maximum Ratings

V

RRM

T

600

V

I

F25

I

F90

T

T

30

15

A

A

Component

Symbol

Conditions

Maximum Ratings

T

VJ

T

stg

operating

-55...+150

-55...+125

°C

°C

V

ISOL

I

2500

V~

F

C

Mounting force with clip

20...120

Nm

Symbol

Conditions

Characteristic Values

min.

typ.

max.

C

P

coupling capacity between shorted

pins and mounting tab in the case

40

pF

d

d

pin - pin

pin - backside metal

1.7

5.5

mm

mm

Weight

6

g

Symbol

Conditions

Characteristic Values

min.

typ.

max.

V

F

I

T

25°C

T

2.5

1.7

2.8

V

V

I

RM

t

rr

I

V

T

7

50

A

ns

R

thJC

R

thJH

(per diode)

with heatsink compound

4.6

2.3

K/W

K/W

b4

4x e

E

W

A

A2

A1

C

b2

b

E1

1 2

5

3 4

MIN

MAX

MIN

MAX

A

4.83

5.21

0.190

0.205

A1

2.59

3.00

0.102

0.118

A2

1.17

2.16

0.046

0.085

b

1.14

1.40

0.045

0.055

b2

1.47

1.73

0.058

0.068

b4

2.54

2.79

0.100

0.110

C

0.51

0.74

0.020

0.029

D

20.80

21.34

0.819

0.840

D1

14.99

15.75

0.590

0.620

D2

1.65

2.03

0.065

0.080

E

19.56

20.29

0.770

0.799

E1

16.76

17.53

0.660

0.690

e

L

19.81

21.34

0.780

0.840

L1

2.11

2.59

0.083

0.102

Q

5.33

6.20

0.210

0.244

R

2.54

4.57

0.100

0.180

W

―

0.10

―

0.004

DIM.

MILLIMETER

INCHES

3.81 BSC

0.15 BSC

Die konvexe Form des Substrates ist typ. < 0.05 mm über

der Kunststoffoberfläche der Bauteilunterseite

The convex bow of substrate is typ. < 0.05 mm over plastic

surface level ofdevice bottom side