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AT-32011 датащи(PDF) 2 Page - Agilent(Hewlett-Packard) |
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AT-32011 датащи(HTML) 2 Page - Agilent(Hewlett-Packard) |
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2 / 10 page ![]() 4-54 Electrical Specifications, TA = 25°C AT-32011 AT-32033 Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max. NF Noise Figure VCE = 2.7 V, IC= 2 mA f = 0.9 GHz dB 1.0[1] 1.3[1] 1.0[2] 1.3[2] GA Associated Gain VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 12.5[1] 14[1] 11[2] 12.5[2] hFE Forward Current Transfer Ratio VCE = 2.7 V,IC = 2 mA – 70 300 70 300 ICBO Collector Cutoff Current VCB = 3 V µA 0.2 0.2 I EBO Emitter Cutoff Current V EB = 1 V µA 1.5 1.5 Notes: 1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB; output loss = 0.3 dB. 2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB; output loss = 0.3 dB. AT-32011, AT-32033 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum[1] VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 11 VCEO Collector-Emitter Voltage V 5.5 IC Collector Current mA 32 PT Power Dissipation[2, 3] mW 200 Tj Junction Temperature °C 150 T STG Storage Temperature °C -65 to 150 Thermal Resistance[2]: θ jc = 550 °C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. TMountingSurface = 25°C. 3. Derate at 1.82 mW/ °C for T C > 40°C. 1000 pF VBB W = 10 L = 1870 W = 10 CKT A: L = 380 CKT B: L = 380 W = 30 L = 60 W = 10 L = 1870 1000 pF VCC W = 10 CKT A: L = 105 CKT B: L = 850 CKT A: W = 30 L = 50 x 2 CKT B: W = 30 L = 60 TEST CIRCUIT BOARD MATL = 0.062" FR-4 ( ε = 4.8) RF IN W = 30 L = 60 CKT A: 25 Ω CKT B: 5 Ω RF OUT NOT TO SCALE DIMENSIONS IN MILS Figure 1. Test Circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. |
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