IXGC16N60B2D1 datasheet(2/2 Pages) IXYS

2 / 2 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGC 16N60B2

IXGC 16N60B2D1

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

min.

typ. max.

= 12A; V

CE = 10 V,

Note 2.

ies

CE = 25 V, VGE = 0 V, f = 1 MHz

780

oes

16N60B2

16N60B2D1

res

C = 20A, VGE = 15 V, VCE = 0.5 VCES

6nC

d(on)

d(off)

150

off

150

260

d(on)

16N60B2

0.38

16N60B2D 1

0.8

d(off)

110

170

off

350

thJC

2.0 K/W

thCK

0.25

K/W

Inductive load, T

J = 125°C

C = 12A; VGE = 15 V

CE = 400 V; RG = Roff = 22 Ω

Note 1

Notes:

1. Switching times may increase for V

CE (Clamp) > 0.8 • VCES,

higher T

or increased R

2. Pulse test, t < 300 ms, duty cycle d < 2 %

Reverse Diode (FRED)

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

min. typ.

max.

F = 10 A, VGE = 0 V

2.66

J = 125°C

1.66

F = 12 A; -diF/dt = 100 A/μs, VR = 100 V

2.5

GE = 0 V; TJ = 125°C

110

F = 1 A; -diF/dt = 100 A/μs; VR = 30 V, VGE = 0 V

thJC

2.5 K/W

ISOPLUS220 Outline

Inductive load, T

J = 125°C

C = 12A; VGE = 15 V

CE = 400 V; RG = Roff = 22 Ω

Note 1

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

IXGC16N60B2D1 датащи(PDF) 2 Page - IXYS Corporation

IXGC16N60B2D1 датащи(HTML) 2 Page - IXYS Corporation

Html Pages

1 2

датащи скачать

ссылки URL