Preliminary Data Sheet P13775EJ2V0DS00

2

NE960R2 SERIES

°°°°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

15

V

Gate to Source Voltage

–7

V

Drain Current

0.35

A

Gate Forward Current

+2.5

mA

Gate Reverse Current

–2.5

mA

Total Power Dissipation

2.5 (2.1

W

Channel Temperature

175

°C

Storage Temperature

–65 to +175

°C

Note NE961R200

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Test Condition

MIN.

TYP.

MAX.

Unit

Drain to Source Voltage

−

9.0

9.0

V

Gain Compression

Gcomp

−−

3.0

dB

Channel Temperature

−−

+130

°C

ELECTRICAL CHARACTERISTICS

°°°°C, Unless otherwise specified, using NEC standard test fixture.)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Saturated Drain Current

0.09

0.2

0.35

A

Pinch-off Voltage

–2.5

–1.8

–0.5

V

Gate to Drain Break Down

Voltage

15

−−

V

Thermal Resistance

Channel to Case

−−

60

(70

°C/W

22.0

24.0

−

dBm

Output Power at 1 dB Gain

Compression Point

−

25.0

−

dBm

Power Added Efficiency at

−

35

−

%

Linear Gain

Ω

8.0

10.0

−

dB

Note NE961R200

Remark DC and RF performance is 100 % testing.