3

TC6320

Supertex inc.

www.supertex.com

Doc.# DSFP-TC6320

D012913

Sym

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

DRAIN-to-SOURCE breakdown voltage

200

-

-

V

V

V

GS(th)

GATE threshold voltage

1.0

-

2.0

V

V

ΔV

GS(th)

Change in V

-

-

-4.5

R

GS

GATE-to-SOURCE shunt resistor

10

-

50

kΩ

I

VZ

GS

GATE-to-SOURCE Zener voltage

13.2

-

25

V

I

I

DSS

Zero GATE voltage DRAIN current

-

-

10.0

µA

V

-

-

1.0

mA

V

V

O

C

I

D(ON)

On-state DRAIN current

1.0

-

-

A

V

2.0

-

-

V

R

DS(ON)

Static DRAIN-to-SOURCE on-state

resistance

-

-

8.0

Ω

V

-

-

7.0

V

ΔR

DS(ON)

Change in R

-

-

1.0

V

G

FS

Forward transconductance

400

-

-

mmho V

C

ISS

Input capacitance

-

-

110

pF

V

V

f = 1.0MHz

C

OSS

Common SOURCE output capacitance

-

-

60

C

RSS

Reverse transfer capacitance

-

-

23

t

d(ON)

Turn-on delay time

-

-

10

ns

V

I

R

t

r

Rise time

-

-

15

t

d(OFF)

Turn-off delay time

-

-

20

t

f

Fall time

-

-

15

V

SD

Diode forward voltage drop

-

-

1.8

V

V

t

rr

Reverse recovery time

-

300

-

ns

V

Notes:

1.

All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.

All A.C. parameters sample tested.

N-Channel Switching Waveforms and Test Circuit

10V

0V

0V

VDD

Input

Output

10%

90%

90%

10%

90%

10%

R

GEN

Input

Pulse

Generator

V

DD

R

L

D.U.T

OUTPUT

t

r

t

f

t

d(ON)

t

(ON)

t

d(OFF)

t

(OFF)