SSPL2015 datasheet(1/8 Pages) SILIKRON

номер детали	SSPL2015

подробное описание детали	Advanced Process Technology

PDF	8 Pages

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производитель	SILIKRON [Silikron Semiconductor Co.,LTD.]

домашняя страница	http://www.silikron.com

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SSPL2015

©Silikron Semiconductor CO.,LTD.

2012.09.04

Version : 1.1

page 1 of 8

www.silikron.com

Main Product Characteristics:

Features and Benefits:

Description:

Absolute max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

18 ①

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

13 ①

IDM

Pulsed Drain Current ②

72

PD @TC = 25°C

Power Dissipation ③

150

W

Linear Derating Factor

1.0

W/°C

VDS

Drain-Source Voltage

200

V

VGS

Gate-to-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy @ L=4.2mH

412

mJ

IAS

Avalanche Current @ L=4.2mH

14

A

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to +175

°C

VDSS

200V

RDS(on)

0.13ohm(typ.)

ID

18A ①

TO220

Marking and pin

Assignment

Schematic diagram



Advanced Process Technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



175℃ operating temperature

These N-Channel enhancement mode power field effect transistors are produced using silikron

proprietary MOSFET technology. This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

switch mode power supplies.

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