2

TP2502

Sym

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source breakdown voltage

-20

-

-

V

V

V

GS(th)

Gate threshold voltage

-1.0

-

-2.4

V

V

∆V

GS(th)

Change in V

-

3.0

4.5

V

I

GSS

Gate body leakage

-

-

-100

nA

V

I

DSS

Zero gate voltage drain current

-

-

-100

μA

V

-

-10

mA

V

V

I

D(ON)

On-state drain current

-0.4

-0.7

-

A

V

-2.0

-3.3

-

V

R

DS(ON)

Static drain-to-source on-state

resistance

-

2.0

3.5

Ω

V

1.5

2.0

V

∆R

DS(ON)

Change in R

-

0.75

1.2

V

G

FS

Forward transconductance

300

650

-

mmho

V

C

ISS

Input capacitance

-

-

125

pF

V

V

f = 1.0 MHz

C

OSS

Common source output capacitance

-

-

70

C

RSS

Reverse transfer capacitance

-

-

25

t

d(ON)

Turn-on delay time

-

-

10

ns

V

I

R

t

r

Rise time

-

-

11

t

d(OFF)

Turn-off delay time

-

-

15

t

f

Fall time

-

-

12

V

SD

Diode forward voltage drop

-

-1.3

-2.0

V

V

t

rr

Reverse recovery time

-

300

-

ns

V

Notes:

All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

All A.C. parameters sample tested.

1.

2.

Thermal Characteristics

Package

I

D

(mA)

I

D

(pulsed)

(A)

Power Dissipation

@ T

O

C

(W)

θ

jc

θ

ja

I

DR

†

(mA)

I

DRM

(A)

TO-243AA

-630

-3.3

15

-630

-3.3

† I

‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

Output

D.U.T.

INPUT

INPUT

OUTPUT

0V

0V

-10V

Switching Waveforms and Test Circuit