SSFN6816

Gate-Body Leakage Current

I

V =±10V,V =0V

10

uA

GSS

GS

DS

Gate-Source Breakdown Voltage

BV

V =0V, I =±250uA

±12

V

GSO

DS

G

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

0.6

1

1.5

V

V =10V, I

GS

14

17

V =4.5V, I

GS

17

20

18

22

Drain-Source On-State Resistance

R

mΩ

DS(ON)

V =3.1V, I

GS

20

24

V =2.5V, I

GS

23

30

Forward Transconductance

g

V =5V,I

FS

DS

17

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

870

PF

lss

Output Capacitance

130

PF

V =15V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

100

PF

=0V,V

Gate resistance

Rg

F=1.0MHz

1.5

Ω

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

4

nS

d(on)

Turn-on Rise Time

t

10

nS

r

Turn-Off Delay Time

28

nS

V =15V,V =10V,

DD

GS

R

Turn-Off Fall Time

L

7

nS

Total Gate Charge

Q

10.5

nC

g

Gate-Source Charge

1.9

nC

V =15V,I

Gate-Drain Charge

DS

4.1

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =1A

0.76

0.9

V

SD

GS

S

Diode Forward Current (Note 2)

I

4.5

A

S

NOTES:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

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