SSFN2569 datasheet(2/6 Pages) SILIKRON

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SSFN2569

©Silikron Semiconductor CO., LTD.

2013.06.07

Version: 1.0

page 2 of 6

www.silikron.com

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-20

—

VGS = 0V, ID = -250μA

RDS(on)

Static Drain-to-Source on-resistance

—

mΩ

VGS=-4.5V,ID = -2.9A

—

105

VGS=-2.5V,ID = -2.2A

VGS(th)

Gate threshold voltage

-0.45

—

-1.0

VDS = VGS, ID = -250μA

IDSS

Drain-to-Source leakage current

—

μA

VDS = -20V,VGS = 0V

—

TJ = 125℃

IGSS

Gate-to-Source forward leakage

—

100

VGS =8V

—

-100

VGS = -8V

Total gate charge

—

6.5

—

ID =-2.6A,

VDS=-16V,

VGS =-4.5V

Qgs

Gate-to-Source charge

—

1.1

—

Qgd

Gate-to-Drain("Miller") charge

—

2.2

—

td(on)

Turn-on delay time

—

4.7

—

VGS=-4.5V, VDS=-16V,

ID = -2.6A,RGEN=2Ω

Rise time

—

td(off)

Turn-Off delay time

—

Fall time

—

Ciss

Input capacitance

—

645

—

VGS = 0V

VDS = -16V

ƒ = 1MHz

Coss

Output capacitance

—

Crss

Reverse transfer capacitance

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

-3.4

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

-17

Diode Forward Voltage

—

-1.2

IS=-1.1A, VGS=0V

trr

Reverse Recovery Time

—

TJ = 25°C, IF =1A,

di/dt = 10

0A/μs

Qrr

Reverse Recovery Charge

—

8.6

—

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