SSFN2269 datasheet(1/5 Pages) SILIKRON

номер детали	SSFN2269

подробное описание детали	High Power and current handing capability

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производитель	SILIKRON [Silikron Semiconductor Co.,LTD.]

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SSFN2269

DESCRIPTION

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

SSFN2269

DFN2X2-6L

－

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±8

V

ID

-3.3

A

Drain Current-Continuous@ Current-Pulsed (Note 1)

IDM

-20

A

Maximum Power Dissipation

PD

1.5

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

83

/W

℃

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-20

V

The SSFN2269 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and operation

with gate voltages as low as 2.5V.

GENERAL FEATURES

●

V = -20V,I

DS

D =-3.3A

Schematic diagram

< 90mΩ @ V

RDS(ON)

GS=-4.5V

< 120mΩ @ V

RDS(ON)

GS=-2.5V

●

High Power and current handing capability

●

Lead free product is acquired

●

Surface Mount Package

Marking and pin Assignment

Application

●

Battery protection

●

Load switch

●

Power management

DFN2X2-6L

1

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Аналогичный номер детали - SSFN2269

Аналогичное описание - SSFN2269

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