SSFD6046 datasheet(1/4 Pages) SILIKRON

номер детали	SSFD6046

подробное описание детали	Advanced trench process technology

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SSFD6046

Feathers:

Advanced trench process technology

avalanche energy, 100% test

Fully characterized avalanche voltage and current

Description:

The SSFD6046 is a new generation of middle voltage

N–Channel enhancement mode trench power MOSFET. This

new technology increases the device reliability and electrical

parameter repeatability. SSFD6046 is assembled in high

reliability and qualified assembly house.

TOP View (TO252)

ID =12A

BV=60V

Rdson=50mΩ（max.）

SSFD6046

Marking and pin Assignment

Absolute Maximum Ratings

Parameter

Max.

Units

ID@T 25ْC

Continuous

VGS@10V

c=

drain current,

12

ID@Tc=100ْC

Continuous drain current,VGS@10V

9

IDM

Pulsed drain current ①

30

A

Power dissipation

20

W

PD@TC

ْC

L

r

0.12

W

=25

inear derating facto

/ْC

VGS

Gate-to-Source voltage

±20

V

EAS

Single

②

8

mJ

pulse avalanche energy

EAR

Repetitive avalanche energy

TBD

TJ

T

St

e

–55 to +1

75

ْC

STG

Operating Junction and

orage Temperature Rang

hermal Resistance

Parameter

Min.

Typ.

Max.

Units

T

RθJC

Ju

e

nction-to-cas

—

7.5

RθJA

J

t

unction-to-ambien

—

60

ْC/W

lectrical Characteristics @TJ=25 ْC (unless otherwise specified)

its

Test Conditions

E

Parameter

Min. Typ. Max. Un

BV SS Drain-to-Sou

wn voltage

V

D

rce breakdo

60

—

V

GS=0V,ID=250μA

RDS(on) Static Drain-to-Source on-resistance

—

46

50

mΩ

VGS=10V,ID=12A

VGS(th)

Gate threshold voltage

1.0

3.0

V

VDS=VGS,ID=250μA

gfs

F

15

orward transconductance

—

S

VDS=5V,ID=12A

—

1

VDS=60V,VGS=0V

IDSS

Drain-to-Source leakage current

10

μA

VGS

ْC

—

VDS=60V,

=0V,TJ=55

Gate-to-Source forward leakage

100

—

VGS=20V

IGSS

Gate-to-Source reverse leakage

—

-100

nA

VGS=-20V

2010.09.01

Version: 1.

1

page

1of4

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