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SSFD4004 датащи(PDF) 3 Page - Silikron Semiconductor Co.,LTD.

номер детали SSFD4004
подробное описание детали  Advanced MOSFET process technology
PDF  8 Pages
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производитель  SILIKRON [Silikron Semiconductor Co.,LTD.]
домашняя страница  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

SSFD4004 датащи(HTML) 3 Page - Silikron Semiconductor Co.,LTD.

  SSFD4004 Datasheet HTML 1Page - Silikron Semiconductor Co.,LTD. SSFD4004 Datasheet HTML 2Page - Silikron Semiconductor Co.,LTD. SSFD4004 Datasheet HTML 3Page - Silikron Semiconductor Co.,LTD. SSFD4004 Datasheet HTML 4Page - Silikron Semiconductor Co.,LTD. SSFD4004 Datasheet HTML 5Page - Silikron Semiconductor Co.,LTD. SSFD4004 Datasheet HTML 6Page - Silikron Semiconductor Co.,LTD. SSFD4004 Datasheet HTML 7Page - Silikron Semiconductor Co.,LTD. SSFD4004 Datasheet HTML 8Page - Silikron Semiconductor Co.,LTD.  
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SSFD4004
©Silikron Semiconductor CO.,LTD.
2012.02.01
Version : 1.0
page 3 of 8
www.silikron.com
Test circuits and Waveforms
Switch Waveforms:
Notes
:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C.
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.



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