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SW50CPF06 датащи(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW50CPF06 датащи(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 4 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev.2.0 Features ■ Ultrafast recovery time ■ Low forward voltage drop ■ 150 °C operating junction temperature ■ Low leakage current ■ Designed and qualified according to JEDEC-JESD47 DIODE Absolute maximum ratings 1/4 VR : 620V IF(AV) : 50A VF at IF : 1.5V SW50CPF06 SAMWIN Item Sales Type Marking Package Packaging 1 SW W 50CPF06 SW50CPF06 TO-3P TUBE Order Codes Symbol Parameter Value Unit V R Repetitive peak reverse voltage 620 V I F(AV) Average rectified forward current (@T C=150 oC) 50 A TJ, TStg Operating junction and storage temperatures -55 ~ + 150 oC General Description This FRED is designed with optimized performance of forward voltage drop and ultrafast recovery time. the platinum doped life time control, guarantee the best overall performance ruggedness and reliability characteristics. This devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as freewheeling diode in low voltage inverters. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element. 1. Anode 2. Gathode 3. Anode 1 2 3 TO-3P Electrical characteristic ( T C = 25 oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit V R Breakdown voltage,blocking voltage IR=100uA 620 V V F Forward voltage I F=3A 0.9 1.13 V I F=50A 1.5 V I F=50A, TJ= 150 °C 1.3 V I R Reverse leakage current V R=600V 500 nA V R=600V, TJ= 150 °C 500 uA CT Junction capacitance V R=600V 30 pF |
Аналогичный номер детали - SW50CPF06 |
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Аналогичное описание - SW50CPF06 |
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