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STGW60H65DF датащи(PDF) 5 Page - STMicroelectronics

номер детали STGW60H65DF
подробное описание детали  60 A, 650 V field stop trench gate IGBT with very fast diode
PDF  13 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW60H65DF датащи(HTML) 5 Page - STMicroelectronics

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STGW60H65DF
Electrical characteristics
Doc ID 023011 Rev 4
5/13
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics (TJ = -40 °C) Figure 3.
Output characteristics (TJ = 25 °C)
Figure 4.
Output characteristics (TJ = 150 °C) Figure 5.
Transfer characteristics
Figure 6.
VCE(SAT) vs. junction temperature
Figure 7.
VCE(SAT) vs. collector current
AM11847v1
0
20
40
60
80
100
120
140
160
180
200
220
01234
IC (A)
VCE (V)
9V
11V
13V
VGE = 15V
VGE = 20V
AM11848v1
0
20
40
60
80
100
120
140
160
180
200
220
01234
IC (A)
VCE (V)
9V
11V
13V
VGE = 15V
VGE = 20V
AM11849v1
0
20
40
60
80
100
120
140
160
180
200
220
01234
IC (A)
VCE (V)
9V
11V
13V
VGE = 15V
VGE = 20V
AM11850v1
0
20
40
60
80
100
120
140
160
180
200
220
6
7
8
9
10
11
12
(V)
IC (A)
VGE
TJ = -40°C
TJ = 25°C
TJ = 150°C
VCE = 10V
AM11851v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100
125
VCE (V)
TJ (ºC)
IC= 120A
IC= 60A
IC= 30A
AM11852v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
30
40
50
60
70
80
90
100
110
VCE (V)
IC (A)
TJ = -40°C
TJ = 25°C
TJ = 150°C
VGE =15V



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