SSF2129H3 datasheet(2/7 Pages) SILIKRON

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SSF2129H3

©Silikron Semiconductor CO., LTD.

2013.01.22

Version: 1.0

page 2 of 7

www.silikron.com

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-20

—

VGS = 0V, ID = -250μA

RDS(on)

Static Drain-to-Source on-resistance

—

mΩ

VGS=-4.5V,ID = -6A

—

mΩ

VGS=-2.5V,ID = -5.3A

VGS(th)

Gate threshold voltage

-0.4

—

-1.5

VDS = VGS, ID = -250μA

IDSS

Drain-to-Source leakage current

—

μA

VDS = -20V,VGS = 0V

—

TJ = 125℃

IGSS

Gate-to-Source forward leakage

—

100

VGS =8V

—

-100

VGS = -8V

Total gate charge

—

ID = -6A,

VDS=-10V,

VGS =-5V

Qgs

Gate-to-Source charge

—

4.2

—

Qgd

Gate-to-Drain("Miller") charge

—

5.6

—

td(on)

Turn-on delay time

—

8.1

—

VGS=-4.5V, VDS=-10V,

ID = -1A,

RGEN=6Ω

Rise time

—

15.2

—

td(off)

Turn-Off delay time

—

Fall time

—

Ciss

Input capacitance

—

2819

—

VGS = 0V

VDS = -10V

ƒ = 1MHz

Coss

Output capacitance

—

262

—

Crss

Reverse transfer capacitance

—

196

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

-6

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

-24

Diode Forward Voltage

—

-1.0

IS=-2.9A, VGS=0V

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