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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SSF1020A датащи(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF1020A датащи(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 5 page  ©Silikron Semiconductor CO.,LTD 2009.12.13 Version : 1. 1 page 1of5 SSF1020A Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 60 A ID@Tc=100ْC Continuous drain current,VGS@10V 50 IDM Pulsed drain current ① 240 PD@TC=25ْC Power dissipation 1 20 W Linear derating factor 2.0 W/ ْC VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 240 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +1 75 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 1.25 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 100 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance —16 20 mΩ VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 3.0 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 58 — S VDS=5V,ID=30A IDSS Drain-to-Source leakage current —— 1 μA VDS=100V,VGS=0V —— 10 VDS=100V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V SSF1020A TOP View (D2PAK) ID =60A BV=100V Rdson=20mΩ（max.） Feathers: Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1020A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1020A is assembled in high reliability and qualified assembly house. Application: Power switching application |
Аналогичный номер детали - SSF1020A |
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Аналогичное описание - SSF1020A |
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